Fabrizio Bonani received the Master (summa cum laude) and PhD degrees from Politecnico di Torino, Italy, in 1992 and 1995, respectively. His research interests are mainly devoted to the physics-based and compact modeling of semiconductor devices for microwave and power applications, with an emphasis on noise and variability simulations, to exploring non-conventional computation paradigms, to the thermal analysis of power circuits and devices, and to the analysis and simulation of nonlinear circuits and dynamical systems. He published more than 200 papers in international journals and peer reviewed international conferences, and he co-authored two books. He served in the Modeling and Simulation committee for the IEEE International Electron Device Meeting (IEDM) for the 2010-2011 term. From 2013 he is a member of the Technical Program Review Committee for the IEEE International Microwave Symposium (IMS). He served as an Associate Editor for the IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems from 2016 to 2022, and, since 2022, he is a member of the Editorial Board of Memories - Materials, Devices, Circuits and Systems, and an Associate Editor for the IEEE Transactions on Electron Devices in the area “Device and Process Modeling”.